1 edition of **Monte Carlo Simulation of Semiconductor Devices** found in the catalog.

- 391 Want to read
- 17 Currently reading

Published
**1993**
by Springer Netherlands in Dordrecht
.

Written in English

- Engineering,
- Statistics,
- Computer engineering

This book provides a thorough introduction to, and review of, the modelling of semiconductor devices using the Monte Carlo particle method. Beginning with a review of the essential physics of solid-state devices and electron transport, Dr Moglestue then explains the particle modelling technique with applications to semiconductor devices using illustrative examples from actual experience. The author draws on a wealth of experience in the field to provide a tutorial and reference source for device physicists, electronics engineers and graduate students wishing to apply Monte Carlo techniques.

**Edition Notes**

Statement | by C. Moglestue |

Classifications | |
---|---|

LC Classifications | TK1-9971 |

The Physical Object | |

Format | [electronic resource] / |

Pagination | 1 online resource (x, 334 p.) |

Number of Pages | 334 |

ID Numbers | |

Open Library | OL27075906M |

ISBN 10 | 9048140080, 9401581339 |

ISBN 10 | 9789048140084, 9789401581332 |

OCLC/WorldCa | 851379858 |

The Monte Carlo Method for Semiconductor Device Simulation by Carlo Jacoboni, , available at Book Depository with free delivery worldwide. The Monte Carlo Method for Semiconductor Device Simulation (Computational Microelectronics) by Jacoboni, Carlo. Springer,

This paper gives a review of applications of the Monte Carlo technique and recent literature on Monte Carlo modeling of semiconductor devices. The emphasis of the original research results reported in this paper is on self-consistent ensemble Monte Carlo simulation of GaAs/AlGaAs Heterostructure Field-Effect Transistors (HFETs) and novel HFET by: Being the Monte Carlo very stable and reliable, Archimedes can be used to know the characteritics of a device even before this last is built. The physics and geometry of a device is described simply by a script, which makes, in this sense, Archimedes a powerful tool for the simulation of quite general semiconductor devices.

Here we discuss the use of the Cellular Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling. The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods. Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations.

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Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the Monte Carlo Simulation of Semiconductor Devices book by: About this book The application of the Monte Carlo method to the simulation of semiconductor devices is presented.

A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices.

Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution.

Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated.

The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices.

Monte Carlo simulation of semiconductor devices. London ; New York: Chapman & Hall, (OCoLC) Online version: Moglestue, C. Monte Carlo simulation of semiconductor devices.

London ; New York: Chapman & Hall, (OCoLC) Material Type: Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors.

The accompanying CD-ROM features the fully-functioning SimGen simulation software for modeling semiconductor devices and book begins with an introduction to the essentials of physics and numerical analysis as they relate to semiconductor simulation.

It introduces both electromagnetism and transport by: This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube.

MONTE CARLO SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Paolo LUGLI Dipartimento di Ingegneria Meccanica, II Universita' di Roma Via O. Raimondo, Roma, Italy SUMMARY A critical discussion of the Monte Carlo simulation as applied to semi conductor device and process modelling is presented.

The advantages and. This book provides a thorough introduction to, and review of, the modeling of semiconductor devices using the Monte Carlo particle method. Beginning with a review of the essential physics of solid-state devices and electron transport, Dr Moglestue then explains the particle modeling technique with applications to semiconductor devices using illustrative examples from actual : C.

Moglestue. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given.

A comparison with traditional simulators is also presented. The Paperback of the Monte Carlo Simulation of Semiconductors: Process and Mismatch Monte Carlo Simulation of MOSFETs, BJTs, JFETs, Resistors, and Due to COVID, orders may be delayed.

Thank you for your : Mike Peralta. This paper gives a review of applications of the Monte Carlo technique and recent literature on Monte Carlo modeling of semiconductor devices.

The emphasis of the original research results reported in this paper is on self-consistent ensemble Monte Carlo simulation of GaAs/AlGaAs Heterostructure Field-Effect Transistors (HFETs) and novel HFET Cited by: Monte Carlo simulation of semiconductor transport - The introduction of the Monte Carlo (MC) method [1] for the analysis of nonlinear charge transport in semiconductors is due to Kurosawa [2] who presented a study of.

Monte Carlo simulation of spin relaxation in - i.e. strings of text saved by a browser on the user's device. Monte Carlo simulation of spin structure composed of dilute magnetic /5().

The Monte Carlo book chapter is but in order to study behavior of semiconductor devices coupling of the Monte. very important to know as in prototypical Monte Carlo device simulations. A SIMULATION APPROACH Authors: Kevin M.

Kramer and W. Nicholas G. Hitchon To most circuit designers, semiconductor devices are simple circuit elements that are treated as little black boxes.

However, from a physics-based perspective, semiconductor devices are very complicated structures that require a good deal of intricate mathematics for their description.

Monte Carlo Simulation of Semiconductor Devices. [C Moglestue] -- This book provides a thorough introduction to, and review of, the modelling of semiconductor devices using the Monte Carlo particle method. Particle simulation of semiconductor devices is a barely new space which has started to catch the curiosity of the world's scientific group.

It represents a time-regular reply of Boltzmann's transport equation, or its quantum mechanical equal, and the sector equation, with out encountering the usual numerical points associated to the direct reply.

Note: If you're looking for a free download links of Monte Carlo Simulation of Semiconductor Devices Pdf, epub, docx and torrent then this site is not for you.

only do ebook promotions online and we does not distribute any free download of ebook on this site. Tomizawa and H. Hashizume, "Method of Monte Carlo Simulation for Submicron Heterojunction Devices," Proceedings of the Fourth International Conference on Numerical Analysis of Semiconductor Devices und Integrated Circuits (NASECODE IV), J.

Miller, Ed., Boole Press, Dublin, Ireland,pp. Google ScholarCited by:. Computer Physics Communications 65 () North-Holland Semiconductor device simulation Karl Gustafson Department of Mathematics, University of Colorado, Boulder, CO USA A short account of certain interesting problems in semiconductor physics, process, and device modelling is by: 2.The semiconductor Monte Carlo simulation, in this scope, is a very powerful tool for the ease and the precision with which an almost exhaustive array of scattering mechanisms can be included.

The duration of the free flights is determined from the scattering rates.In my case, I run a Monte Carlo simulation to generate optimal gross profit for a 95% confidence level. I assume random input variables follow a uniform distribution, but I do not know how to.